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TIP140, TIP141, TIP142,
(NPN); TIP145, TIP146,
TIP147, (PNP)
Darlington Complementary
Silicon Power Transistors
Designed for general−purpose amplifier and low frequency
switching applications.
Features
• High DC Current Gain −



Min hFE = 1000 @ IC
= 5.0 A, VCE = 4 V
Collector−Emitter Sustaining Voltage − @ 30 mA
VCEO(sus) = 60 Vdc (Min) − TIP140, TIP145
= 80 Vdc (Min) − TIP141, TIP146
= 100 Vdc (Min) − TIP142, TIP147
Monolithic Construction with Built−In Base−Emitter Shunt Resistor
These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Symbol
TIP140
TIP145
TIP141
TIP146
TIP142
TIP147
Unit
Collector − Emitter Voltage
VCEO
60
80
100
Vdc
Collector − Base Voltage
VCB
60
80
100
Vdc
Emitter − Base Voltage
VEB
Collector Current
− Continuous
− Peak (Note 1)
IC
5.0
Vdc
Adc
10
15
Base Current − Continuous
IB
0.5
Adc
Total Power Dissipation
@ TC = 25_C
PD
125
W
TJ, Tstg
−65 to +150
_C
Operating and Storage
Junction Temperature Range
10 AMPERE
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−100 VOLTS, 125 WATTS
SOT−93 (TO−218)
CASE 340D
STYLE 1
TO−247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device will
be available only in the TO−247
package. Reference FPCN# 16827.
ORDERING INFORMATION
THERMAL CHARACTERISTICS
Characteristic
http://onsemi.com
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Case
RqJC
1.0
°C/W
Thermal Resistance,
Junction−to−Ambient
RqJA
35.7
°C/W
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.