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download bu2520df datasheet pdf

Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520DF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic
envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
VF
tf
Collector-emitter voltage peak value
Collector-emmiter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
VBE = 0 V
6
0.35
1500
800
10
25
45
5.0
2.2
0.5
V
V
A
A
W
V
A
V
µs
PINNING - SOT199
PIN
Ths ≤ 25 ˚C
IC = 6.0 A; IB = 1.2 A
IF = 6.0 A
ICsat = 6.0 A; IB(end) = 1.0 A
PIN CONFIGURATION
SYMBOL
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
c
case
b
Rbe
1
2
e
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1