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BSM 50 GD 120 DN2
IGBT Power Module
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
VCE
IC
BSM 50 GD 120 DN2
1200V 72A
Package
Ordering Code
ECONOPACK 2K
C67076-A2514-A67
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
Collector-gate voltage
VCGR
RGE = 20 kΩ
Values
1200
Unit
V
1200
Gate-emitter voltage
VGE
DC collector current
IC
± 20
A
TC = 25 °C
72
TC = 80 °C
50
Pulsed collector current, tp = 1 ms
ICpuls
TC = 25 °C
144
TC = 80 °C
100
Ptot
Power dissipation per IGBT
TC = 25 °C
W
350
Chip temperature
Tj
Storage temperature
Tstg
Thermal resistance, chip case
RthJC
≤ 0.35
Diode thermal resistance, chip case
RthJCD
≤ 0.7
Insulation test voltage, t = 1min.
Vis
2500
Vac
Creepage distance
-
16
mm
Clearance
-
11
DIN humidity category, DIN 40 040
-
F
IEC climatic category, DIN IEC 68-1
-
Semiconductor Group
1
http://store.iiic.cc/
+ 150
°C
-55 ... + 150
K/W
sec
55 / 150 / 56
Jan-10-1997
BSM 50 GD 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Gate threshold voltage
VGE(th)
VGE = VCE, IC = 2 mA
V
4.5