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AO3415
20V P-Channel MOSFET
General Description
Product Summary
The AO3415 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as
a load switch applications.
VDS
-20V
ID (at VGS=-4.5V)
-4A
RDS(ON) (at VGS= -4.5V)
< 41mΩ
RDS(ON) (at VGS= -2.5V)
< 53mΩ
RDS(ON) (at VGS= -1.8V)
< 65mΩ
ESD protected
SOT23
Top View
D
Bottom View
D
G
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
C
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 7: Sep 2011
Steady-State
Steady-State
A
1.5
W
1
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
V
-30
PD
TA=70°C
±8
-3.5
IDM
TA=25°C
Units
V
-4
ID
TA=70°C
Maximum
-20
RθJA
RθJL
www.aosmd.com
Typ
65
85
43
°C
Max
80
100
52
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO3415
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=-250µA, VGS=0V