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Si9945AEY
Vishay Siliconix
Dual N-Channel 60-V (D-S), 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
60
ID (A)
0.080 at VGS = 10 V
± 3.7
0.100 at VGS = 4.5 V
± 3.4
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• 175 °C Maximum Junction Temperature
• Compliant to RoHS Directive 2002/95/EC
D2
D1
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
G1
G2
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Ordering Information: Si9945AEY-T1-E3 (Lead (Pb)-free)
Si9945AEY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
S2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)a
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
V
± 3.7
ID
± 3.2
IDM
25
IS
2
A
2.4
PD
W
1.7
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambienta
Symbol
t ≤ 10 s
Steady State
RthJA
Typical
Maximum
62.5
93
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 70758
S09-1341-Rev. F, 13-Jul-09
www.vishay.com