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FDS4435BZ
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20m:
Features
General Description
„ Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A
This
„ Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A
Semiconductor’s advanced PowerTrench® process that has
„ Extended VGSS range (-25V) for battery applications
been especially tailored to minimize the on-state resistance.
„ HBM ESD protection level of ±3.8KV typical (note 3)
This device is well suited for Power Management and load
„ High performance trench technology for extremely low rDS(on)
switching applications common in Notebook Computers and
„ High power and current handling capability
Portable Battery Packs.
P-Channel
MOSFET
is
produced
using
Fairchild
„ Termination is Lead-free and RoHS compliant
D
D
D
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
D
G
S
S
Pin 1
S
SO-8
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
ID
TA = 25°C
(Note 1a)
-Pulsed
PD
Ratings
-30
Units
V
±25
V
-8.8
-50
Power Dissipation
TA = 25°C
(Note 1a)
2.5
Power Dissipation
TA = 25°C
(Note 1b)
1.0
EAS
Single Pulse Avalanche Energy
TJ, TSTG
Operating and Storage Junction Temperature Range
(Note 4)
A
W
24
mJ
-55 to +150
°C
Thermal Characteristics
RTJC
Thermal Resistance, Junction to Case
RTJA
Thermal Resistance, Junction to Ambient
25
(Note 1a)
50
°C/W
Package Marking and Ordering Information