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2SK1317
Silicon N Channel MOS FET
REJ03G0929-0200
(Previous: ADE-208-1268)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features





High breakdown voltage VDSS = 1500 V
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter and motor driver
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
1. Gate
2. Drain
(Flange)
3. Source
G
1
Rev.2.00 Sep 07, 2005 page 1 of 6
S
2
3
2SK1317
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Symbol
VDSS
Ratings
1500
Unit
V
VGSS
ID
±20
2.5
V
A
7
2.5
A
A
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
ID(pulse)
IDR
*1
*2
Channel dissipation
Channel temperature
Pch
Tch
100
150
W
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Tstg
–55 to +150
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Symbol
V(BR)DSS
Min
1500
Typ

Max

Unit
V
Test conditions
ID = 10 mA, VGS = 0
Gate to source leak current
Zero gate voltage drain current
IGSS
IDSS