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(7 0 Ω ) E
2SB1560
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390)
Ratings
Unit
ICBO
VCB=–160V
–100max
µA
VCEO
–150
V
IEBO
VEB=–5V
–100max
µA
V
V
V(BR)CEO
IC=–30mA
–150min
–10
A
hFE
VCE=–4V, IC=–7A
5000min∗
IB
–1
A
VCE(sat)
IC=–7A, IB=–7mA
–2.5max
PC
100(Tc=25°C)
W
VBE(sat)
IC=–7A, IB=–7mA
–3.0max
V
Tj
150
°C
fr
VCE=–12V, IE=2A
50typ
MHz
–55 to +150
°C
VCB=–10V, f=1MHz
230typ
pF
COB
4.0
–5
IC
19.9±0.3
VEBO
Tstg
15.6±0.4
9.6
1.8
Conditions
V
5.0±0.2
Unit
–160
2.0
Ratings
Symbol
External Dimensions MT-100(TO3P)
(Ta=25°C)
VCBO
Symbol
C
Application : Audio, Series Regulator and General Purpose
■Electrical Characteristics
(Ta=25°C)
Equivalent circuit
a
4.8±0.2
2.0±0.1
ø3.2±0.1
b
V
2
4.0max
■Absolute maximum ratings
20.0min
Darlington
B
3
1.05 +0.2
-0.1
0.65 +0.2
-0.1
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
VCC
(V)