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2N5550
NPN Epitaxial Silicon Transistor
Features
• Amplifier Transistor
• Collector-Emitter Voltage: VCEO = 140 V
1
TO-92
1. Emitter 2. Base 3. Collector
Ordering Information
Part Number
Top Mark
Package
Packing Method
2N5550BU
2N5550
TO-92 3L
Bulk
2N5550TA
2N5550
TO-92 3L
Ammo
2N5550TAR
2N5550
TO-92 3L
Ammo
2N5550TF
2N5550
TO-92 3L
Tape and Reel
2N5550TFR
2N5550
TO-92 3L
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
V
VCBO
Collector-Base Voltage
160
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
6
V
600
mA
IC
Collector Current
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 to 150
°C
© 2000 Fairchild Semiconductor Corporation
2N5550 Rev. 1.4
www.fairchildsemi.com
2N5550 — NPN Epitaxial Silicon Transistor
February 2015
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Parameter
Max.
Unit
Total Device Dissipation
625
mW